| PART |
Description |
Maker |
| 2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Si, NPN, RF SMALL SIGNAL TRANSISTOR
100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
UHF BAND, Si, RF SMALL SIGNAL, FET
3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
LEDtronics, Inc.
Integrated Device Technology, Inc.
Vishay Beyschlag
Air Cost Control
Mini-Circuits
Moeller Electric, Corp.
OSRAM GmbH
Cooper Hand Tools
KOA Speer Electronics,Inc.
ProMOS Technologies, Inc.
|
| PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM |
NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SMA4032 |
3 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Darlington With built-in flywheel diode
|
SANKEN[Sanken electric]
|
| BSW66 BSW66-JQR-AR1 |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-205AD
Bipolar NPN Device in a Hermetically sealed TO39
|
SEMELAB LTD
Seme LAB
|
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| SFT1002 SFT1004 SFT1012 SFT1010 SFT1014 SFT1016 |
250 V, 100 A high speed NPN transistor
120 V, 100 A high energy NPN transistor
100 V, 100 A high energy NPN transistor
140 V, 100 A high energy NPN transistor
160 V, 100 A high energy NPN transistor
|
Solid State Devices Inc
|
| TIP142 TIP140 TIP141 |
TRANSISTOR, DARLINGTON SOT-93 10 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON POWER DARLINGTONS
|
BOURNS INC
Bourns, Inc.
Bourns Electronic Solutions
|
| 2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC[NEC]
|
| BDV65B |
12 A, 100 V, NPN, Si, POWER TRANSISTOR
|
POWER INNOVATIONS LTD
|
| TIP41CNR |
6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
STMICROELECTRONICS
|
| BD645 BD649 |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220
|
POWER INNOVATIONS LTD
|
|
