| PART |
Description |
Maker |
| IRFD9220 |
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-0.56A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-0.56A)
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
|
IRF[International Rectifier]
|
| SIA456DJ-T1-GE3 |
Trans MOSFET N-CH 200V 1.1A 6-Pin PowerPAK SC-70 T/R
|
Vishay Siliconix
|
| MRF6522-60 MRF6522-70 |
Trans RF MOSFET N-CH 60V 7A 3-Pin Case 360B-04
Trans RF MOSFET N-CH 65V 7A 3-Pin NI-600
|
New Jersey Semiconductors
|
| 2N4932 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39
|
New Jersey Semiconductors
|
| 2N4934 |
Trans GP BJT PNP 200V 0.2A 3-Pin TO-39
|
New Jersey Semiconductor
|
| 2N5415/B |
Trans GP BJT PNP 200V 1A 3-Pin TO-39
|
New Jersey Semiconductor
|
| IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
| IRF9620S IRF9620STRL IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V Rds(on)=1.5ohm Id=-3.5A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-3.5A)
|
IRF[International Rectifier]
|
| IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
| IRF640 IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m
N-Channel MOSFET 200V, 18A, 0.14楼?
N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
| IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
|
International Rectifier, Corp.
|
