| PART |
Description |
Maker |
| SBAT54XV2T1G BAT54XV2T5G |
Schottky Barrier Diodes Extremely Fast Switching Speed
|
ON Semiconductor
|
| LBAT54SLT3G LBAT54SLT1G LBAT54SLT1G-11 |
Dual Series Schottky Barrier Diodes Extremely Fast Switching Speed
|
Leshan Radio Company
|
| LBAT54SWT3G LBAT54SWT1G-11 |
Dual Series Schottky Barrier Diodes Extremely Fast Switching Speed
|
Leshan Radio Company
|
| AP2122 AP2122AK-3.3TRE1 AP2122AK-1.5TRE1 AP2122AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| AGP2125K-2.8TRG1 AP2125KS-2.5TRE1 AP2125KS-2.5TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
Diodes
|
| AP2129K-ADJTRG1 AP2129K-3.3TRG1 AP2129K-1.0TRG1 AP |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
Diodes
|
| AP2126K-ADJTRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
Diodes
|
| S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): -20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1730 0135 |
High-Speed Switching Applications High-Speed Switching Applications
From old datasheet system
PNP Epitaxial Planar Silicon Transistors
|
Sanyo
|
| KSC2335F KSC2335 |
High Speed/ High Voltage Switching
High Speed, High Voltage Switching
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK2035 E001424 |
HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS
From old datasheet system
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
