| PART |
Description |
Maker |
| 2SC5232 E007767 |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
From old datasheet system
GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2878-A 2SC2878-B |
For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2SC287807 2SC2878 |
Silicon NPN Epitaxial Type For Muting and Switching Applications
|
Toshiba Semiconductor
|
| KTC2874 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)
|
KEC(Korea Electronics)
|
| 2SC421307 2SC4213 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
TOSHIBA
|
| 2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SA1955 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SA1954 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| HN4C05JU |
MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| HN1C03FU E001973 |
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
