| PART |
Description |
Maker |
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| KE3587-G |
N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
| KI4953DY |
100per Rg Tested Drain-Source Voltage Vds -30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KO3402 AO3402 |
VDS (V) = 30V ID= 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V)
|
TY Semiconductor Co., Ltd
|
| 2SB919 2SD1235 2SB919S 2SD1235R |
30V/8A High-Speed Switching Applications 30V/8A高速开关应
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 8A I(C) | TO-220AB
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-218VAR 晶体管|晶体管|叩| 30V的五（巴西）总裁| 8A条一（c）|18VAR
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Shindengen Electric Manufacturing Co., Ltd.
|
| IRFY1310M-T257 |
N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N沟道功率MOS场效应管,HI-REL应用(Vds:100V,Id(max):14A,Rds(on):0.055Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| ZVP3310FTA |
100 Volt VDS
|
TY Semiconductor Co., L...
|
| SB20W03V |
Schottky Barrier Diode (Twin Type Cathode Common) 30V, 2A Rectifier
30V 2A Rectifier
30V/ 2A Rectifier
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| SB30-03F |
30V, 3.0A Rectifier(高频整流应用的重复反向电0V，平均整流电.0A 整流 30V的，3.0A的整流器（高频整流应用的重复反向电压30V的，平均整流电流3.0A的整流器
30V/ 3A Rectifier
Schottky Barrier Diode 30V, 3A Rectifier
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| KXU03N25 |
VDS (V) = 250V RDS(ON) 2 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
| RDS035 RDS035L03 |
Switching (30V, 3.5A)
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,3.5A I(D),SO
|
Rohm
|
