| PART |
Description |
Maker |
| RN4987FE |
TOSHIBA Transistor Silicon NPNPNP Epitaxial Type
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type
|
Toshiba Semiconductor
|
| 2SC5886 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5703 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5784 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S06U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT4S06 |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6L03AE |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6L04AT |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPEl
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5174 |
From old datasheet system
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1611 RN1610 |
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1211 RN1210 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC752 |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
|
Toshiba Semiconductor
|
