| PART |
Description |
Maker |
| MMBT2222 |
Epitaxial planar die construction
|
MAKO SEMICONDUCTOR CO.,...
|
| BZT52C30 BZT52C9V1 BZT52C5V1 |
1/2 Watt ZEBER DIODES Planar Die Construction
|
First Components International
First Components Intern...
|
| BZT52C30 BZT52C9V1 BZT52C2V0 |
Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current
|
TY Semiconductor Co., Ltd
|
| A42 |
Epitaxial planar die construction. Ideal for medium power amplification and switching.
NPN High Voltage Transistors
|
TY Semiconductor Co., L...
TY Semicondutor
|
| GBJ35005 |
Glass passivated die construction
|
Sangdest Microelectroni...
|
| DXO10701095-5 |
Planar Resonator Construction
|
SYNERGY MICROWAVE CORPO...
|
| MJD112L MJD112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| TIP117F |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| TIP117 |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| 907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM
PUNCH&DIE 10.0MM CIRCULAR
PUNCH&DIE 16.5MM CIRCULAR
PUNCH&DIE 25.0MM CIRCULAR
PUNCH&DIE 12.0MM CIRCULAR
PUNCH&DIE 9.0MM CIRCULAR
PUNCH&DIE 20.0MM CIRCULAR
PUNCH&DIE 12.5MM CIRCULAR
STRIPPER 37.0 X 13.7 D CON
STRIPPER 31.75MM DIAMETER 低产31.75MM直径
LOUVRE TOOL 卢浮宫工
PUNCH&DIE 10.0MM CIRCULAR
STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp.
Molex, Inc.
|
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
