| PART |
Description |
Maker |
| RJQ6021DPM |
600V - 10A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6035DPP-E0 RJK6035DPP-E0-15 |
600V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FGW35N60H |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
| RJH60F5BDPQ-A0 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F6BDPQ-A0 |
600V - 45A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6025DPE RJK6025DPE-00J3 RJK6025DPE12 |
600V - 0.8A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FGW30N60VD |
Discrete IGBT (High-Speed V series) 600V / 30A
|
Fuji Electric
|
| FGW35N60HD |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
| RJK6014DPP-E0 |
600V - 16A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S7DPP-E0 RJK60S7DPP-E0-T2 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
