| PART |
Description |
Maker |
| BA982 LL4148 LS4154 BAV21 LS4150 |
SILICON, VHF BAND, MIXER DIODE
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA
0.15 A, 35 V, SILICON, SIGNAL DIODE
0.25 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.3 A, 50 V, SILICON, SIGNAL DIODE
|
TEMIC SEMICONDUCTORS
|
| BAT15-02V |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Schottky Diodes for Mixer Applications
|
INFINEON TECHNOLOGIES AG
|
| DMJ4771-000 DME2029-000 DME2031-000 DME2029-255 DM |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
|
| MA41202C |
SILICON DETECTOR DIODE SILICON, X-KU BAND, MIXER DIODE, DO-23
|
Advanced Semiconductor, Inc.
|
| BAT63 Q62702-A1004 |
From old datasheet system
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) 硅肖特基二极管（低的混频器和探测器高达千兆赫的频率垒二极管）
|
Siemens Semiconductor G...
Siemens Semiconductor Group
Infineon
SIEMENS AG
|
| MA4X796 |
Silicon epitaxial planar type SILICON, VHF BAND, MIXER DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| HSB88WS |
Schottky Barrier Diodes for Detection and Mixer
Silicon Schottky Barrier Diode for Balanced Mixer
|
HITACHI[Hitachi Semiconductor]
|
| HSMS-281E-BLKG HSMS-2818-TR1 |
SILICON, MIXER DIODE
|
AGILENT TECHNOLOGIES INC
|
| ZC2812ETC |
SILICON, MIXER DIODE
|
DIODES INC
|
| ZC2811ETC |
SILICON, MIXER DIODE
|
ZETEX PLC
|
|
