| PART |
Description |
Maker |
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| 2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1800V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4630LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications
900V/100mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4738 |
High voltage and high current:VCE=50V,IC=150mA(Max.) High hFE: =120 to 700
|
TY Semiconductor Co., L...
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
|
KEC Holdings
KEC(Korea Electronics)
|
| KSC2335F KSC2335 |
High Speed/ High Voltage Switching
High Speed, High Voltage Switching
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| LTC4440ES6 LTC4440 LTC4440EMS8E LTC444009 |
High Speed, High Voltage High Side Gate Driver
|
Linear Technology
|
| 2N3725 |
HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING
|
Seme LAB
|
