| PART |
Description |
Maker |
| FDMC86106LZ13 |
N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ
|
Fairchild Semiconductor
|
| STL8NH3LL |
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLATULTRA LOW GATE CHARGE STripFETMOSFET N沟道30 0.012з - 8甲的PowerFLAT⑩超低栅极电荷STripFET⑩MOSFET
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLAT⑩ ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL MOSFET
N-CHANNEL 30 V - 0.012 ?- 8 A PowerFLAT ULTRA LOW GATE CHARGE STripFET MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| ACSL-6300 ACSL-6420 ACSL-6420-56R ACSL-6420-56T AC |
4 CHANNEL LOGIC OUTPUT OPTOCOUPLER
ECONOLINE: RBM - New Micro Size SIP 6 Package- Industry Standard Pinout- 3kVDC Isolation- UL94V-0 Package Material- Efficiency to 85% 多通道和双向，15 MBd的数字逻辑门光电耦合
(ACSL6xx0) Multi-Channel and Bi-Directional / 15 MBd Digital Logic Gate Optocoupler
(ACSL-6xx0) Multi-Channel and Bi-Directional / 15 MBd Digital Logic Gate Optocoupler
ACSL-6210-00R · Multi-Channel and Bi-Directional, 15 MBd Digital Logic Gate Optocoupler
ACSL-6400-00T · Multi-Channel and Bi-Directional, 15 MBd Digital Logic Gate Optocoupler
|
AGILENT TECHNOLOGIES INC
Glenair, Inc.
TE Connectivity, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| 2741T 2741S |
T1/E1 Transformer Shielded
HIGH FREQUENCY MAGNETICS T1/E1 Through Hole Shielded Transformers
|
BEL[Bel Fuse Inc.]
|
| S1812R-121K S1812R-122K S1812R-152K S1812R-102K S1 |
Shielded Surface Mount Inductors
INDUCTOR SHIELDED 1.5UH SMD 1 ELEMENT, 1.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR SHIELDED 1.0UH SMD 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR SHIELDED 3.3UH SMD 1 ELEMENT, 3.3 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR SHIELDED 4.7UH SMD 1 ELEMENT, 4.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR SHIELDED 22UH SMD 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR SHIELDED 680UH SMD 1 ELEMENT, 680 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR SHIELDED 180UH SMD 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR SHIELDED 10UH SMD
1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
API Delevan
|
| 3SK320 |
RF Dual Gate FETs
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
|
