| PART |
Description |
Maker |
| HSM88WA |
MPAK package is suitable for high density surface mounting and high speed assembly
|
TY Semiconductor Co., Ltd
|
| HSM88AS |
MPAK package is suitable for high density surface mounting and high speed assembly
|
TY Semiconductor Co., Ltd
|
| TMP47C102M TMP47C202P |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.84 to 5.37; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
|
Toshiba Corporation
Toshiba, Corp.
|
| TLWJ1100T11 TLWJ1100 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.37 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Panel Circuit Indicator
|
Toshiba Corporation
Toshiba Semiconductor
|
| TMP86C420FG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP86C407MG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 21.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TLYU267 TLYU267F |
Panel Circuit Indicator
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
|
Toshiba Semiconductor
Toshiba Corporation
|
| HVD372B |
Super small Flat Lead Package (SFP) is suitable for surface mount design
|
TY Semiconductor Co., Ltd
|
| HVD355B |
Super small Flat Lead Package (SFP) is suitable for surface mount design
|
TY Semiconductor Co., Ltd
|
| DF2S12S DF3A6.2FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
