| PART |
Description |
Maker |
| SPLMN81G2 |
Passively Cooled Diode Laser Bar, 50 W cw at 808 nm
|
OSRAM GmbH
|
| SPLBG98 SPLBW81 SPLBS94 SPLBX83 SPLBX98 SPLBX94 SP |
Unmounted Laser Bar 40 W, 980 nm
Unmounted Laser Bar 20 W, 808 nm
Unmounted Laser Bar 100 W, qcw
Unmounted Laser Bar 30 W, 830 nm
Unmounted Laser Bar 30 W, 980 nm
Unmounted Laser Bar 30 W, 940 nm
Unmounted Laser Bar 30 W, 808 nm
|
Infineon
|
| SPLBG81-9S |
Un-mounted Laser Bars, 50% Fill-factor, 808 nm
|
OSRAM GmbH
|
| SPLBG81-2S |
Un-mounted Laser Bars, 50% Fill-factor, 808 nm
|
OSRAM GmbH
|
| Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NDL7910PC NDL7603P NDL7910P |
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS
Optical Fiber Communication Laser Diode(光纤通信激光二极管)
|
NEC[NEC]
NEC Corp.
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| NX5521EH NX5521EK |
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
Renesas Electronics Corporation
|
