| PART |
Description |
Maker |
| 2SA1730 |
Adoption of FBET , MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SA1417 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
| 2SA1724 |
High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC4548 |
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.
|
TY Semiconductor Co., Ltd
|
| 2SC4694 |
Adoption of MBIT process. High DC current gain. High VEBO (VEBO 25V).
|
TY Semiconductor Co., Ltd
|
| SST39SF040 |
(SST39SF010A / SST39SF020A / SST39SF040) 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| DA28F016SV-075 DA28F016SV-070 E28F016SV-075 E28F01 |
WSR2 0.04 Ohms 1% Tolerance
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 80 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 70 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 75 ns, PDSO56
|
Intel Corp.
Intel Corporation
Intel, Corp.
|
| 39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
| SST39VF-800A-554C-B3KE SST39VF-800A-554C-B3QE SST3 |
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Microchip Technology Inc.
Silicon Storage Technology, Inc
|
