| PART |
Description |
Maker |
| 2SC5069 |
High current capacity. Adoption of MBIT process. High DC current gain.
|
TY Semiconductor Co., Ltd
|
| 2SC4601 |
Surface mount type device making the following possible. Adoption of MBIT process.
|
TY Semiconductor Co., Ltd
|
| 2SA1729 |
Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.
|
TY Semiconductor Co., Ltd
|
| 2SA1724 |
High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SA1434 |
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., L...
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SB1302 SB1302 |
PNP Epitaxial Planar Silicon Transistors
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| M29F010B120K1 M29F010B90K1 M29F010B90K1E M29F010B9 |
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory 1兆位28KB × 8，统一座单电源闪存
JFET-Input Low Power High Drive Dual Operational Amplifier 8-CDIP -55 to 125 1兆位28KB × 8，统一座单电源闪存
Multi-Digit 7-Segment Display; Number of Digits/Alpha:4; Display Technology:LCD; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes 1兆位28KB × 8，统一座单电源闪存
LCD Display Panel; No. of Digits/Alpha:320; Display Technology:LCD; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| DA28F016XS-15 DA28F016XS-20 E28F016XS-15 E28F016XS |
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels
|
Intel
|
