| PART |
Description |
Maker |
| DSBT2-S-2D-DC5V DSBT2-S-2D-DC9V DSBT2-S-2D-DC6V DS |
4000 V BREAKDOWN VOLTAGE DS RELAYS
4,000 V BREAKDOWN VOLTAGE DS RELAYS 4000击穿电压继电器局副局
|
NAIS[Nais(Matsushita Electric Works)]
ETC[ETC]
Matsushita Electric Works(Nais)
Hamamatsu Photonics K.K.
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| 2SC3361 |
Fast switching speed. High breakdown voltage.Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| R2M |
OVER VOLTAGE PROTACTION DIODE BREAKDOWN VOLTAGE: 135-150V REVERSE SURGE CURRENT: 1A
|
SSE[Shanghai Sunrise Electronics]
Shanghai Sunrise Electronics Co., LTD.
|
| 1N6267 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W
|
Shanghai Sunrise Electronics
|
| EE2-5NU EE2-12NUX-R EE2-12NUX-L EE2-12NUX EE2-12NU |
POWER/SIGNAL RELAY, DPDT, LATCHED, 12VDC (COIL), 2A (CONTACT), 220VDC (CONTACT), SURFACE MOUNT-STRAIGHT
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type
Compact and lightweight High breakdown voltage Surface mounting type
Replaced by PCM1602A : 105dB SNR 6-Channel Audio DAC 48-LQFP
OSC 5V SMT PLAS 14X9 CMOS
105dB SNR 8-Channel Audio DAC 28-SSOP/QSOP -25 to 70
Replaced by PCM1754 : 97dB SNR Stereo DAC 14-SOIC
Replaced by PCM1609A : 105dB SNR 8-Channel Audio DAC 48-LQFP
105dB SNR 8-Channel Audio DAC 48-LQFP -25 to 85
Serial Interrupt Stream Deserializer 48-LQFP
Compact and lightweight, High breakdown voltage, Surface mounting type 小巧轻盈，击穿电压高，表面安装型
Replaced by PCM1798 : 106dB SNR Stereo DAC 28-SSOP 小巧轻盈，击穿电压高，表面安装型
Compact and lightweight/ High breakdown voltage/ Surface mounting type
|
NEC TOKIN CORP
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HDPE15U60G |
High breakdown voltage
|
SemiHow Co.,Ltd.
|
| MM5Z2V0 MM5Z5V1 MM5Z10 MM5Z3V0 MM5Z2V2 MM5Z43 MM5Z |
Standard Zener Breakdown Voltage Range 2.0 V to 75 V
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| X1228S14-2.7 X1228S14Z-2.7 X1228V14Z-2.7 X1228S14Z |
EXT. DISTANCE DATA CABLE 16 CO 1 TIMER(S), REAL TIME CLOCK, PDSO14
1 TIMER(S), REAL TIME CLOCK, PDSO14 PLASTIC, SOIC-14
1 TIMER(S), REAL TIME CLOCK, PDSO14 ROHS COMPLIANT, PLASTIC, TSSOP-14
1 TIMER(S), REAL TIME CLOCK, PDSO14 ROHS COMPLIANT, PLASTIC, SOIC-14
TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:15V; Breakdown Voltage, Vbr:16.7V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:100pF; Package/Case:SOT-323; Breakdown Voltage Min:16.7V 1 TIMER(S), REAL TIME CLOCK, PDSO14
15V 300W SOT23 TRANSORB-DUAL-SINGL''ENDED
DIODE 05 TVS SO8
16 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor
RTC Module With CPU Supervisor
EPD TVS Diode Array for ESD and Latch-Up Protection
TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:12V; Breakdown Voltage, Vbr:13.3V; Capacitance, Cd:150pF; Package/Case:SOT-323; Breakdown Voltage Min:13.3V; Junction Capacitance:150pF; Leaded Process Compatible:No RoHS Compliant: No
EXT. DISTANCE DATA CABLE 25 CO
CONNECTOR ASSEMBLIES
Real Time Clock/Calendar/CPU Supervisor with EEPROM
|
Intersil, Corp.
http://
Intersil Corporation
|
| 2SD814 2SD814A 2SD0814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
|
PANASONIC[Panasonic Semiconductor]
|
