| PART |
Description |
Maker |
| 2SA1587 |
High voltage VCEO=-120V High hFE hFE=200 to 700 Small package
|
TY Semiconductor Co., Ltd
|
| CSC2240 CSA970 CSA970BL CSA970GR |
0.300W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.100A Ic, 200 - 400 hFE
0.300W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.100A Ic, 350 - 700 hFE
CSA 970 PNP SILICON PLANAR EPITAXIAL TRANSISTORS, CSC 2240 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
CDIL[Continental Device India Limited]
|
| 2SC3632-Z |
High voltage VCEO=600V High speed tf 0.5ìs Collector to base voltage VCBO 600 V
|
TY Semiconductor Co., Ltd
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
| 2SC2946 |
High Votage VCEO=200V High speed tf us Collector to base voltage VCBO 330 V
|
TY Semiconductor Co., Ltd
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| LMBTA44LT1G |
NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400
|
Leshan Radio Company
|
| FCX705TA FCX705 |
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
|
ZETEX[Zetex Semiconductors]
|
| AME385-25 AME385BEAS AME385BEAT AME385DEHA AME385B |
Micropower Voltage Reference Diode 微功耗电压基准二极管
OPTOISO W/O BASE HIGH VCEO 6-DIP
|
AME, Inc.
AME[Analog Microelectronics]
|
