| PART |
Description |
Maker |
| CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CPH6223-TL-E |
Bipolar Transistor
Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6
|
ON Semiconductor
|
| 2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Low Vce(sat) Transistor (-20V, -3A)
From old datasheet system
Low VCE(sat) Transistor(低VCE(sat)晶体
Low Vce(sat) Transistor (-20V/ -3A)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305 |
SMD Bipolar Power Transistor NPN General Purpose Amplifier/Switch
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| IRG4PH40KDPBF IRG4PH40KDPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSUALATED GATE BIPOLAR TRANSISTOR WITH YLTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics
STMicroelectronics
|
| IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.59V，@和VGE \u003d 15V的，集成电路\u003d 17A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
