| PART |
Description |
Maker |
| 2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SA1416 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
| 2SA1813 |
Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., Ltd
|
| 2SA1705 |
Bipolar Transistor Adoption of FBET process
|
ON Semiconductor
|
| 2SC4548 |
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.
|
TY Semiconductor Co., Ltd
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| SST39LF400A SST39LF200A |
(SST39xF200A/400A/800A) 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Silicon Storage Technology
|
| M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| DA28F016SV-075 DA28F016SV-070 E28F016SV-075 E28F01 |
WSR2 0.04 Ohms 1% Tolerance
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 80 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 70 ns, PDSO56
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 75 ns, PDSO56
|
Intel Corp.
Intel Corporation
Intel, Corp.
|
| VS28F016SV MS28F016SV |
16-Mbit (1-Mbit x 16/ 2-Mbit x 8) FlashFileTM MEMORY
16-Mbit FlashFileTM MEMORY
16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY 16兆位兆位× 16兆位× 8FlashFileTM记忆
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
