| PART |
Description |
Maker |
| KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current
PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| KSD1691 KSD1691OS KSD1691YS KSD1691GS KSD1691YSTST |
NPN Epitaxial Silicon Transistor
Low Collector-Emtter Saturation Voltage & Large Collector Current
Feature
|
Fairchild Semiconductor
|
| 2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| DP100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| DP030S |
Extremely low collector-to-emitter saturation voltage 极低的集电极到发射极饱和电压
|
AUK, Corp.
AUK[AUK corp]
|
| 2SD2402 |
High current capacitance. Low collector saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SB1628 |
High current capacitance. Low collector saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SB1202 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| 2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| DN500F |
NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
| MMBT2222A SMBT2222A07 |
NPN Silicon Switching Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
