| PART |
Description |
Maker |
| CDD1933 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE.
|
Continental Device India Limited
|
| BYX101GAMO |
0.4 A, 10000 V, SILICON, SIGNAL DIODE
|
NXP SEMICONDUCTORS
|
| HMC611LP4E HMC611LP4 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC611 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
Hittite Microwave Corporation
|
| SI4840DY-T1-E3 |
10000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| HFA1102Y |
OP-AMP, 10000 uV OFFSET-MAX, UUC8
|
HARRIS SEMICONDUCTOR
|
| HA2-2522/883 |
OP-AMP, 10000 uV OFFSET-MAX, MBCY8
|
INTERSIL CORP
|
| DBZ3410KVDC2500PF-2050R6000 |
1 FUNCTIONS, 10000 V, 6 A, FEED THROUGH CAPACITOR CERAMIC PACKAGE-2
|
Vishay Beyschlag
|
| CTLQ2220CF-103M CENTRALTECHNOLOGIES-CTLQ2220CF-6R8 |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
|
CENTRAL TECHNOLOGIES
|
| 3549S-1AC-103B 3549H-1BD-103B |
PRECISION POT-7/8" 22MM DIA 10T WW RESISTOR, POTENTIOMETER, WIRE WOUND, 10 TURN(S), 2 W, 10000 ohm
PRECISION POT-7/8" 22MM DIA 10T WW RESISTOR, POTENTIOMETER, HYBRID, 10 TURN(S), 2 W, 10000 ohm
|
Bourns, Inc.
|
|
