| PART |
Description |
Maker |
| ASP-129637-01 |
342 STACKER HEIGHT NOT AVAILABLE AS STANDAR
|
Samtec, Inc
|
| TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array
300 usable gate, 1.5 micron, CMOS gate array
700 usable gate, 1.5 micron, CMOS gate array
4 K usable gate, 1.0 micron, CMOS gate array
500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
| MRCXXNXX |
Micron Power Resistors
|
Allen
|
| N25Q128A11ESE40G |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| N25Q128A11ESE40X N25Q128A11ESF40X N25Q128A11E1240X |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| CB-C8 |
3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC
|
NEC Corp.
|
| M25P40-VMC6GX M25P40-VMB6TXX M25P40-VMC6TXX M25P40 |
Micron M25P40 Serial Flash Embedded Memory
|
Micron Technology
|
| UPD65003 UPD65010 UPD65020 |
(UPD65000 Series) 3-Micron CMOS Gate Arrays
|
NEC Electronics
|
| MRF286S MRF286 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
|
Motorola, Inc
|
| MRF19125 MRF19125S MRF19125SR3 |
RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MRF9060MBR1 MRF9060MR1 |
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
Motorola, Inc.
|
