| PART |
Description |
Maker |
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC7SET86F02 TC7SET86F TC7SET86FU |
TENTATIVE (UNDER DEVELOPMENT) TOSHIBA CMOS DIGITAL INTERATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
| TC58FVT160A TC58FVT160AFT TC58FVT160AFT-10 TC58FVT |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TPCF8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L |
262,144-WORD BY 16-BIT STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| TC55VEM208ASTN55 TC55VEM208ASTN40 TOSHIBACORPORATI |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
524,288-WORD BY 8-BIT STATIC RAM
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| TC55VD1618FF-133 TC55VD1618FF-150 TC55VD1618FF-167 |
1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55V4366FF-150 TC55V4366FF-133 TC55V4366FF-167 |
131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Semiconductor
Toshiba Corporation
Toshiba, Corp.
|
| TPCS8101 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCF8303 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPC8113 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCP8404 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS)
|
Toshiba Semiconductor
|
