| PART |
Description |
Maker |
| MG1200V1US51 |
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MG50Q2YS91 |
GTR Module Silicon N-Channel IGBT
|
Toshiba
|
| MG150J2YS50 |
TOSHIBA GTR Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MBRF1045CT-G MBRF1030CT-G MBRF1060CT-G MBRF10100CT |
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=40V, V<sub>R</sub>=40V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=30V, V<sub>R</sub>=30V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=100V, V<sub>R</sub>=100V, I<sub>O</sub>=10A
|
Comchip Technology
|
| MG200J2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG30J6ES50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG300Q1US51 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG300J2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG150Q2YS51 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG75Q2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
