| PART |
Description |
Maker |
| EE2-5NU EE2-12NUX-R EE2-12NUX-L EE2-12NUX EE2-12NU |
POWER/SIGNAL RELAY, DPDT, LATCHED, 12VDC (COIL), 2A (CONTACT), 220VDC (CONTACT), SURFACE MOUNT-STRAIGHT
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type
Compact and lightweight High breakdown voltage Surface mounting type
Replaced by PCM1602A : 105dB SNR 6-Channel Audio DAC 48-LQFP
OSC 5V SMT PLAS 14X9 CMOS
105dB SNR 8-Channel Audio DAC 28-SSOP/QSOP -25 to 70
Replaced by PCM1754 : 97dB SNR Stereo DAC 14-SOIC
Replaced by PCM1609A : 105dB SNR 8-Channel Audio DAC 48-LQFP
105dB SNR 8-Channel Audio DAC 48-LQFP -25 to 85
Serial Interrupt Stream Deserializer 48-LQFP
Compact and lightweight, High breakdown voltage, Surface mounting type 小巧轻盈，击穿电压高，表面安装型
Replaced by PCM1798 : 106dB SNR Stereo DAC 28-SSOP 小巧轻盈，击穿电压高，表面安装型
Compact and lightweight/ High breakdown voltage/ Surface mounting type
|
NEC TOKIN CORP
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BFN37 BFN39 Q62702-F1305 Q62702-F1304 |
From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFN22 Q62702-F1024 Q62702-F102 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CSC1573R CSC1573AQ |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 100 - 220 hFE.
1.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.070A Ic, 60 - 150 hFE.
|
Continental Device India Limited
|
| BAS85 |
Low forward voltage High breakdown voltage Guard ring protected
|
TY Semiconductor Co., Ltd
|
| 2SA1514K |
High breakdown voltage.Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| PZTA42 |
High breakdown voltage
|
TY Semiconductor Co., Ltd
|
| MMSTA92 |
High breakdown voltage
|
TY Semiconductor Co., Ltd
|
| 2SB1220 |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
| 1PS76SB62 |
Ultra high swiching speed Very low capacitance High breakdown voltage
|
TY Semiconductor Co., L...
|
