| PART |
Description |
Maker |
| 2SA1252 |
High VEBO. Wide ASO and high durability against breakdown.
|
TY Semiconductor Co., Ltd
|
| EC3202C |
High-Gain High-VEBO Transistors
Muting Circuit Applications
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| 2SC3134 |
NPN Epitaxial Planar Silicon Transistors High Vebo, AF Amp Applications
|
SANYO
|
| HLMP-V500 HLMA-QL00 HLMA-VH00 HLMA-VL00 HLMP-V100 |
T-13/4 (5 mm), Wide Viewing Angle, High Intensity LED Lamps
Subminiature High Performance AlInGaP LED Lamps
2.5 X 7.4 mm RECTANGULAR SOLID STATE LAMPS
T-13/4 (5 mm)/ Wide Viewing Angle/ High Intensity LED Lamps
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Fairchild Semiconductor
|
| MSK600-15 MSK600B |
Ultra Low Quiescent Current - ±15mA for High Voltage
WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER
|
M.S. Kennedy Corporatio...
Anaren Microwave
|
| ASI10599 HF100-12 |
NPN Silicon RF Power Transistor(Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
|
| MC33181 MC33181D MC33181P MC34181 MC34184DTB MC331 |
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11500 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11000 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
(MC34182 / MC34184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
Dual Precision Timer 14-PDIP -40 to 85
(MC33181 - MC33184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
|
http://
Motorola Mobility Holdings, Inc.
ON Semiconductor
Motorola, Inc.
|
| K4H510738E-TC/LAA K4H510738E-TC/LB0 K4H510738E-TC/ |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 堆叠12Mb电子芯片DDR SDRAM内存规格（x4/x8
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MC35071U MC35072 MC33071AD MC33071AP MC33074D MC35 |
High Slew Rate, Wide Bandwidth, Single Supply Operational Amplifiers
(MC35071 / MC35072 / MC35074) High Slew Rate / Single Supply Operational Amplifiers
V(cc): 44V; high slew rate, wide bandwidth, single supply operational amplifier
|
MOTOROLA[Motorola, Inc]
|
| K4H511638C-UC K4H511638C-UCA2 K4H511638C-UCB0 K4H5 |
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 14-SOIC 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-PDIP 荤的512Mb芯片DDR SDRAM内存规格
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 1N1190 JANTXV1N3768R 1N1184 1N1184R 1N1186 1N1186R |
Standard Rectifier (trr more than 500ns)
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-SOIC -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AB
Single Wide-Bandwidth High-Output Drive Single-Supply Op Amp With Shutdown 8-SOIC 0 to 70 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 20-HTSSOP -40 to 125 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
|
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| ASI10730 VHB50-28S |
NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
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