| PART |
Description |
Maker |
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR-II SRAM 4-Word Burst Architecture 18-Mbit DDR-II SRAM 2-Word Burst Architecture 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 9-Mbit (256K x 32) Pipelined DCD Sync SRAM 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc. EPCOS AG
|
| AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PF |
3.3V 256K x 16/18 pipeline burst synchronous SRAM 3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压(3.3V 256K × 18流水线脉冲同步静态内存) 3.3V 256K 】 16/18 pipeline burst synchronous SRAM 3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz 3.3V 256K × 16/18 pipeline burst synchronous SRAM
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor ...
|
| AS7C33256NTF32_36A AS7C33256NTF32-36A.V.1.1 AS7C33 |
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 8.5 ns, PQFP100 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 10 ns, PQFP100 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 8.5 ns, PQFP100 3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 7.5 ns, PQFP100 DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/REEL DIODE ZENER SINGLE 1000mW 36Vz 7mA-Izt 0.05 5uA-Ir 27.4Vr DO41-GLASS 5K/REEL From old datasheet system NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
| CY7C1327F-100AC CY7C1327F-100AI CY7C1327F CY7C1327 |
4-Mb (256K x 18) Pipelined Sync SRAM 256K X 18 CACHE SRAM, 2.6 ns, PBGA119 4-Mb (256K x 18) Pipelined Sync SRAM 256K X 18 CACHE SRAM, 3.5 ns, PBGA119 LED GREEN DUAL T1 RT ANG ASSY
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
| IS61NP25632 IS61NP25636 IS61NP51218 IS61NP25632-5T |
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PBGA119 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PBGA119 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PBGA119 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PBGA119 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PQFP100 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PQFP100 Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PQFP100 Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PBGA119 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PBGA119 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PQFP100 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PQFP100 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PQFP100 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K × 3256K × 36和管道为512k × 18编号WAIT状态总线的SRAM
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
| CY7C1356BV25-225 CY7C1354BV25-166 CY7C1354BV25-225 |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBLArchitecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor Corp. Crystek, Corp.
|
| LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs 256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE 256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE 256K (32768 words X 8 bits) SRAM Control Pins: OE and CE 256K (32768 words 8 bits) SRAM Control Pins: OE and CE SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC From old datasheet system
|
Intersil Sanyo Semiconductor Corp SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
| AS7C33256NTD18B AS7C33256NTD18B.V.1.5 AS7C33256NTD |
3.3V 256K x 8 Pipelined SRAM with NTD 256K X 18 ZBT SRAM, 3 ns, PQFP100 From old datasheet system NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
| CY7C1356DV25-250BZC CY7C1356DV25-250BZI CY7C1356DV |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1992CV18-200BZC CY7C1992CV18-200BZI CY7C1992CV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 512K X 36 DDR SRAM, 0.45 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| GS880V36BT-250 GS880V18BT-333 GS880V18BT-250 GS880 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PQFP100
|
GSI Technology, Inc. http://
|