| PART |
Description |
Maker |
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
| MA45430 MA45436 MA45437 MA45438 MA45439 MA45444 MA |
HF-UHF BAND, 4.7 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE Surface Mount Abrupt Tuning Varactors
|
MACOM[Tyco Electronics]
|
| ADVANCEDSEMICONDUCTORINC-AT902001 AT3000A AT3000A2 |
X BAND, 0.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE X BAND, 0.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE L BAND, 3.9 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE L-S BAND, 3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE S-C BAND, 2.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VHF BAND, 27 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
ADVANCED SEMICONDUCTOR INC
|
| 1N4800A 1N4795B 1N4787A |
100 pF, 17 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 22 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 8.2 pF, 28 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1N4800A 1N4798 |
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 68 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| AT6022B-15 |
SILICON ABRUPT JUNCTION VARACTOR Diode
|
ASI[Advanced Semiconductor]
|
| MTV4030-09 MTV4030-10 MTV4030-12 MTV4030-14 MTV403 |
Silicon Abrupt Tuning Varactor Diodes
|
M/A-COM Technology Solu...
|
| MV104ZL1 |
32 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-92
|
Motorola Mobility Holdings, Inc.
|
| AT9017-10 |
SILICON ABRUPT JUNCTION TUNING VARACTOR Diode
|
Advanced Semiconductor ASI
|
| AT6020 |
Diode SILICON ABRUPT JUNCTION TUNING VARACTOR
|
Advanced Semiconductor ASI
|
| GVD91302-011 |
VHF-C BAND, 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
SPRAGUE-GOODMAN ELECTRONICS INC
|
| 1N5446A 1N5468A 1N5475ACHIP |
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
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