| PART |
Description |
Maker |
| RJK0381DPA RJK0381DPA-00-J5A RJK0381DPA13 |
Built in SBD N Channel Power MOS High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03E4DPA RJK03E4DPA13 RJK03E4DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03P9DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPH5826 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH5812 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| CPH5824 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET的：N沟道MOSFET的硅SBD智能交通：肖特基二极管通用开关器件应
Nch SBD
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| SCH2080KE |
N-channel SiC power MOSFET co-packaged with SiC-SBD
|
Rohm
|
| D4SBS6 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
