| PART |
Description |
Maker |
| HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| IXFH24N50 IXFH26N50 IXFT26N50 IXFM24N50 IXFH26N50S |
26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
2MM TERMINAL STRIPS
HiPerFET Power MOSFETs 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| SFF440M |
8 AMP 500 Volts 0.85 OHM N-Channel POWER MOSFET 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254
|
Solid State Devices, Inc.
|
| PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| IRF9640 RF1S9640SM FN2284 |
11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs
From old datasheet system
11A 200V 0.500 Ohm P-Channel Power MOSFETs
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| RFP2N20L FN2875 |
2A/ 200V/ 3.500 Ohm/ Logic Level/ N-Channel Power MOSFET
2A 200V 3.500 Ohm Logic Level N-Channel Power MOSFET
From old datasheet system
2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| 2SK876 |
12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| 2SK3200 |
10 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SANKEN ELECTRIC CO LTD
|
|
