| PART |
Description |
Maker |
| 2SK3530-01MR 2SK3530 |
Fuji Power MOSFET SuperFAP-G series Target Specification
Fuji Power MOSFET SuperFAP-G series Target Specification 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| APTC60AM18SC |
143 A, 600 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
|
ADPOW[Advanced Power Technology]
|
| 2SK3875-01 28F256L18 |
Power MOSFET / Super FAP-G Series
FUJI POWER MOSFET Super FAP-G Series
|
FUJI[Fuji Electric]
|
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FL14KM-10A |
Power MOSFETs: FL Series
HIGH-SPEED SWITCHING USE Nch POWER MOSFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SIHU6N62E |
E Series Power MOSFET
|
Vishay Siliconix
|
| SIHG25N40D |
D Series Power MOSFET
|
Vishay Siliconix
|
| SIHP15N60E |
E Series Power MOSFET
|
Vishay Siliconix
|
| IRFP460B SIHG460B |
D Series Power MOSFET
|
Vishay Siliconix
|
| SIHF15N60E |
E Series Power MOSFET
|
Vishay Siliconix
|
| SIHA15N50E |
E Series Power MOSFET
|
Vishay Siliconix
|
|
