| PART |
Description |
Maker |
| 2SA1215 |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) 15 A, 160 V, PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| 2SB1275 2SB1236A 2SB1236ATV2 2SB1236ATV2P 2SB1236A |
1.5 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Power Transistor (-160V , -1.5A)
Power Transistor ( 160V /1.5A)
1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
ROHM[Rohm]
|
| PZT5551L-B-AA3-R PZT5551-A-AA3-R PZT5551L-A-AA3-R |
0.6 A, 160 V, NPN, Si, POWER TRANSISTOR LEAD FREE PACKAGE-4
0.6 A, 160 V, NPN, Si, POWER TRANSISTOR SOT-223, 4 PIN
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| 2SC2911S |
0.14 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126
|
SANYO SEMICONDUCTOR CO LTD
|
| 2SB1516F5/NP 2SA1727F5/NP 2SD1918F5/NP 2SD1767T101 |
3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.7 A, 80 V, NPN, Si, POWER TRANSISTOR
3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
5 A, 20 V, PNP, Si, POWER TRANSISTOR
1 A, 32 V, NPN, Si, POWER TRANSISTOR
2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
International Rectifier, Corp.
Dielectric Laboratories, Inc.
|
| IRLU8721PBF IRLR8721PBF |
Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status: Remarks:
HEXFET Power MOSFET HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| TCB8GOB26CFREQ-OUT5 TCB8GOB26BFREQ-OUT5 HCB8GOD56B |
TCXO, CLOCK, 1 MHz - 160 MHz, LOW POWER SCHOTTKY OUTPUT DIP-4
TCXO, CLOCK, 10 MHz - 160 MHz, HCMOS OUTPUT DIP-4
TCXO, CLOCK, 10 MHz - 160 MHz, ECL 10KH OUTPUT DIP-4
TCXO, CLOCK, 1 MHz - 160 MHz, ACMOS OUTPUT DIP-4
|
Vectron International, Inc.
|
| LCD160G160A |
160 x 160 Dots Graphic LCD
|
Vishay Siliconix
|
| TDA7498E |
160-watt 160-watt dual BTL class-D audio amplifier
|
STMicroelectronics
|
| APT4016BVR |
POWER MOS V 400V 27A 0.160 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| 2SB1371 |
Silicon PNP triple diffusion planar type(For high power amplification) 6 A, 120 V, PNP, Si, POWER TRANSISTOR
|
TE Connectivity, Ltd.
PANASONIC[Panasonic Semiconductor]
|
| SDM5013 SDM6000 SDM3203 SDM5005 SDM5004 SDM4006 |
10 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-3
15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3
5 A, 40 V, PNP, Si, POWER TRANSISTOR
20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
20 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-3
15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
|
