| PART |
Description |
Maker |
| 1DI300M-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 300A I(C)
Power Transistor Module
|
Fuji Electric
|
| CZ300R10KN CC150R10KN CC50R10KN |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 880V V(BR)CEO | 300A I(C) 晶体管|晶体管电源模块|达林顿| 880V五（巴西）总裁| 300我（丙）
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 150A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五（巴西）总裁| 150A一（c
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五（巴西）总裁| 50A条一（c
|
ON Semiconductor
RECOM Electronic GmbH
|
| D67DE7 D67DE5 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 500V V(BR)CEO | 100A I(C) 晶体管|晶体管电源模块|达林顿| 500V五（巴西）总裁| 100号A一（c
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 400V V(BR)CEO | 100A I(C) 晶体管|晶体管电源模块|达林顿| 400V五（巴西）总裁| 100号A一（c
|
Powerex, Inc.
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| 2SC2059KM 2SC2059KN 2SC2059KP 2SC4099P 2SC4099M 2S |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SC-70 晶体管|晶体管|叩| 20V的五（巴西）总裁| 20mA的一（c）|的SC - 70
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-323
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SC-59
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR|BJT|NPN|20VV(BR)CEO|20MAI(C)|SC-59
|
Vishay Intertechnology, Inc.
|
| KD424520HB |
TRANSISTOR,BJT POWER MODULE,HALF BRIDGE,DARLINGTON,450V V(BR)CEO,200A I(C)
From old datasheet system
|
Powerex Inc
|
| 2N327A 2N1254 2N1275 2N760B 2N2008 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 110V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管| npn型| 110伏特五（巴西）总裁| 500mA的一（c）|
|
Electronic Theatre Controls, Inc.
|
| MG50G2XXX |
BJT and MOS-BJT Power Module
|
Toshiba
|
| ETN36-030 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 400V V(BR)CEO | 300A I(C) 晶体管|晶体管电源模块|达林顿| 400V五（巴西）总裁| 300我（丙）
|
Unisonic Technologies Co., Ltd.
|
| ESM3045AV |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 24A I(C) 晶体管|晶体管电源模块|达林顿| 450V五（巴西）总裁| 24A条一（c
|
Rectron Semiconductor
|
| QM30TB2H |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 30A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1KV交五（巴西）总裁| 30A条一（c
|
Mitsubishi Electric, Corp.
|
