| PART |
Description |
Maker |
| MGTO1000 MGTO1200 |
GATE TURN OFF THYRISTORS
Gate turn-off thyristor / Repetitive peak off-state voltage 1000 V / 18 A RMS
|
MOTOROLA[Motorola, Inc]
|
| GCU35AB-120 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| 5SHX08F4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 390 A, 4500 V, SCR
|
ABB, Ltd.
The ABB Group
|
| FG1000BV-90DA FD2000BV-90DA |
Gate turn-off thyristor for high power inverter use press pack type
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| CM400HB-90H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
400 A, 4500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| DG858BW45-15 |
Gate Turn-off Thyristor
|
Dynex Semiconductor
|
| DG646BH25 |
Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
|
| DG858BW45 |
Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
|
| DG408BP45-15 |
Gate Turn-off Thyristor
|
Dynex Semiconductor
|
| DG858DW45-15 |
Gate Turn-Off Thyristor
|
Dynex Semiconductor
|
| 5SGA20H4502 |
Gate turn-off Thyristor
|
The ABB Group
|
