| PART |
Description |
Maker |
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts 150 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| P6KE39A P6KE9.1CA P6KE51CA P6KE300A P6KE300CA P6KE |
16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
RF Down-Converter 20-QFN 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Presettable Synchronous 4-Bit Up/Down Binary Counters 16-SOIC -40 to 85 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP 0 to 70
600 Watt Transient Voltage Suppressors
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Microsemi
|
| PM150CBS060 |
Intellimod?Module MAXISS Series?Multi AXIS Servo IPM (150 Amperes/600 Volts)
Intellimod Module MAXISS Series Multi AXIS Servo IPM (150 Amperes/600 Volts)
Intellimod⑩ Module MAXISS Series⑩ Multi AXIS Servo IPM (150 Amperes/600 Volts)
IntellimodModule MAXISS SeriesMulti AXIS Servo IPM (150 Amperes/600 Volts)
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| AT28PC64E-25DM AT28PC64E-35DM/883 AT28PC64E-15DM A |
8K X 8 EEPROM 5V, 250 ns, CDIP28 0.600 INCH, CERDIP-28
8K X 8 EEPROM 5V, 350 ns, CDIP28 0.600 INCH, CERDIP-28
8K X 8 EEPROM 5V, 150 ns, CDIP28 0.600 INCH, CERDIP-28
8K X 8 EEPROM 5V, 200 ns, PQCC32 PLASTIC, LCC-32
8K X 8 EEPROM 5V, 250 ns, PDIP28 0.600 INCH, PLASTIC, DIP-28
8K X 8 EEPROM 5V, 150 ns, PDIP28 0.600 INCH, PLASTIC, DIP-28
|
Atmel, Corp.
|
| SD200R12M 150LR120A 152LR120A SD150N06M |
200 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AC
150 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AC
150 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AC
|
VISHAY SEMICONDUCTORS
|
| STF23NM60N STI23NM60N STW23NM60N STP23NM60N STB23N |
N-channel 600 V - 0.150 ヘ - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh⑩ Power MOSFET
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh?/a> Power MOSFET
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET
N-channel 600 V - 0.150 楼? - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh垄芒 Power MOSFET
|
http://
STMicroelectronics
|
| TT430N DT95N TD251N |
800 A, 1800 V, SCR
150 A, 600 V, SCR
410 A, 600 V, SCR
|
Infineon Technologies AG
|
| CM150E3U-12H |
CHOPPER IGBTMOD 150 AMPERES/600 VOLTS
|
Powerex Power Semiconductors
|
| P6SMB27A P6SMB68A P6SMB220 P6SMB220A P6SMB30 P6SMB |
600 Watts Suface Mount Transient Voltage Suppressor
600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
|
Taiwan Semiconductor Company, Ltd
http://
Taiwan Semiconductor Co...
|
| KD324515 |
Dual Darlington Transistor Module (150 Amperes/600 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
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