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M2V28S40ATP-7 - 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54

M2V28S40ATP-7_6888243.PDF Datasheet


 Full text search : 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
 Product Description search : 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54


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HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
IBM03164B9C IBM0316809C 16Mb Synchronous DRAM(16M位同步动态RAM)
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IBM Microeletronics
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Integrated Silicon Solution, Inc.
HY5V26CF HY5V26CF-6 HY5V26CF-8 HY5V26CF-H HY5V26CF 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
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HYNIX SEMICONDUCTOR INC
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Elite Semiconductor Memory Technology, Inc.
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Elite Semiconductor Memory Technology, Inc.
M52D16161A-10TG 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
Elite Semiconductor Memory Technology, Inc.
 
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