| PART |
Description |
Maker |
| STP43N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2310 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
