| PART |
Description |
Maker |
| K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M12L128168A-5BIG M12L128168A-5TIG M12L128168A-6BIG |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
2M x 16 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| MT48H4M16LFB4-10IT |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
|
|
| IS42R16800E-8BL |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
|
INTEGRATED SILICON SOLUTION INC
|
| HY5V26ELF-5I |
8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PBGA54
|
HYNIX SEMICONDUCTOR INC
|
| K4M28163PD-RS1L K4M28163PD-BS1L |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 CSP-54
|
3M Company
|
| HY5V56FF-H HY5V56FLF-H |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
HYNIX SEMICONDUCTOR INC
|
| NT5SE8M16DF-6K |
8M X 16 SYNCHRONOUS DRAM, 5 ns, PBGA54 0.80 MM PITCH, BGA-54
|
Nanya Technology, Corp.
|
| HYB25S256160AC-7.5 |
16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, PLASTIC, TFBGA-54
|
Infineon Technologies AG
|
| K4S51163PF-YF K4S51163PF-F1L K4S51163PF-F90 K4S511 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile-SDRAM 8米16 × 4银行移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYB18L256160BCX-7.5 HYE18L256160BCX-7.5 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Qimonda AG
|
