| PART |
Description |
Maker |
| GRM216F51E154ZA01D |
CAP CER .15UF 25V Y5V 0805 CAPACITOR, CERAMIC, MULTILAYER, 25 V, Y5V, 0.15 uF, SURFACE MOUNT, 0805
|
Murata Manufacturing Co., Ltd.
|
| GRM188F51E103ZA01D |
CAP 0.01UF 25V 80-20% Y5V SMD-0603 TR-7-PA SN100 CAPACITOR, CERAMIC, MULTILAYER, 25 V, Y5V, 0.01 uF, SURFACE MOUNT, 0603
|
Murata Manufacturing Co., Ltd.
|
| GRM39Y5V104Z025AD |
CAP,F,CER,Y5V,0.1UF, 80/-20%,85C,25V,SMD,0603 CAPACITOR, CERAMIC, MULTILAYER, 25 V, Y5V, 0.1 uF, SURFACE MOUNT, 0603
|
Murata Manufacturing Co., Ltd.
|
| LP62S2048M-10LLT LP62S2048M-10LT LP62S2048M-70LLT |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM
.033UF 100V 10% MONOLIT CERM CAP
CAP 3300PF 50V CERAMIC MONO 5%
CAP 2700PF 50V CERAMIC MONO 5%
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| GRM36COG151J050AD GRM39COG151J050AD GRM39COG221J05 |
CAP 150 _PF 5, REEL IS PREFERD CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.00015 uF, SURFACE MOUNT, 0402
CAP, 150PF, NPO, 50V, 5%, 0603 CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.00015 uF, SURFACE MOUNT, 0603
CAP, 220PF, NPO, 50V, 5%, 0603 CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.00022 uF, SURFACE MOUNT, 0603
CAP, 100PF, NPO, 50V, 5%, 0603 CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.0001 uF, SURFACE MOUNT, 0603
CAP NPO CHIP 22P 5% 50V SMT 0603 CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.000022 uF, SURFACE MOUNT, 0603
12 PF 5% 50V NPO/COG (0603) CHIP CAP TR CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.000012 uF, SURFACE MOUNT, 0603
CAP, 20PF, NPO, 50V, 5%, 0603 CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.00002 uF, SURFACE MOUNT, 0603
CAP 12PF 50V 2% C0G SMD-0402 TR-7 SN-PB CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.000012 uF, SURFACE MOUNT, 0402
|
Murata Manufacturing Co., Ltd.
|
| GMC45Z5U225G25NT GMC40Z5U225G25NT GMC02Y5V153Z6R3N |
CAPACITOR, CERAMIC, MULTILAYER, 25 V, Z5U, 2.2 uF, SURFACE MOUNT, 1825 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 25 V, Z5U, 2.2 uF, SURFACE MOUNT, 1808 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, Y5V, 0.015 uF, SURFACE MOUNT, 0201 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, Y5V, 0.022 uF, SURFACE MOUNT, 0201 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, Y5V, 0.027 uF, SURFACE MOUNT, 0201 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, X7R, 0.001 uF, SURFACE MOUNT, 0201 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, Y5V, 0.15 uF, SURFACE MOUNT, 0201 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, Y5V, 0.12 uF, SURFACE MOUNT, 0201 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, Y5V, 0.018 uF, SURFACE MOUNT, 0201 CHIP, ROHS COMPLIANT
CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, X7R, 0.00001 uF, SURFACE MOUNT, 0201 CHIP, ROHS COMPLIANT
1 UF 10% 25V X7R (1206) CHIP CAP TR CAPACITOR, CERAMIC, MULTILAYER, 25 V, X7R, 1 uF, SURFACE MOUNT, 1206
0.022 UF 10% 50V X7R (0603) CAP TR CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.022 uF, SURFACE MOUNT, 0603
|
Cal-Chip Electronics
|
| BZD23 BZD23-C10 BZD23-C100 BZD23-C11 BZD23-C110 BZ |
360 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Voltage regulator diodes 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Voltage regulator diodes 3.9 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAP 1UF 50V 80-20% Y5V SMD-1206 TR-7 PLATED-NI/SN 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Voltage regulator diodes 4.7 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Voltage regulator diodes 6.2 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Voltage regulator diodes 5.1 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CAP 0.01UF 50V 10% Y5V SMD-1206 TR-7 PLATED-NI/SN
Voltage regulator diodes(稳压二极
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
INDUCTOR 47UH 5%
FERRITE BEAD 47UH 10%
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| MZ9310 |
CAP 0.047UF 50V 50V X7R RAD.20 .20X.20 BULK R-MIL-PRF-39014
|
|
| EDD5116AFTA-5B-E EDD5108AFTA-5B-E EDD5108AFTA-5C-E |
512M bits DDR SDRAM
CAP 1UF 16V 80-20% Y5V SMD-0805 TR-7-PA
|
Elpida Memory, Inc.
|
| QM20TG-9B |
MEDIUM POWER SWITCHING USE INSULATED TYPE
CAP CER 10UF 16V Y5V 1206
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
|
