| PART |
Description |
Maker |
| K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd.
Omron Electronics, LLC
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC-4516DA727PFA-A75 MC-4516DA727 MC-4516DA727EFA-A |
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
NEC, Corp.
NEC Corp.
|
| MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
| HY57V561620B HY57V561620BLT-6I HY57V561620BLT-8I H |
SDRAM - 256Mb
4 Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| MT48LC4M16A2P-75 MT48LC4M16A2P-75LIT MT48LC16M4A2P |
4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
16M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Micron Technology, Inc.
|
| IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
|
| HY5V56FF-H HY5V56FLF-H |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
HYNIX SEMICONDUCTOR INC
|
| IS42VM16160D-8BLI IS42VM16160D-8BLI-TR IS42VM16160 |
16M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
|
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
|
| HYB39S256160T-8B |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
SIEMENS A G
|
| MT48LC16M32L2F5-10 |
16M X 32 SYNCHRONOUS DRAM, PBGA90
|
|
