| PART |
Description |
Maker |
| V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| GS8130219GE-333I GS8130207E-375IT |
4M X 18 DDR SRAM, 0.45 ns, PBGA165
16M X 8 DDR SRAM, 0.45 ns, PBGA165
|
GSI TECHNOLOGY
|
| HYMD216M726AL6-K HYMD216M726AL6-H HYMD216M726AL6-J |
Unbuffered DDR SO-DIMM
16M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
| CY7C1529AV18-200BZXI CY7C1529AV18-250BZXI |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1566V1808 CY7C1566V18-400BZC CY7C1566V18-400BZ |
4M X 18 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HYB25D128800T-7 HYB25D128800T-7.5 HYB25D128800TL-6 |
128Mb (16Mx8) DDR 266A (2-3-3)
128Mb (16Mx8) DDR 266B (2.5-3-3)
16M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
| CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1423JV18-250BZXC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture; Architecture: DDR-II SIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
