| PART |
Description |
Maker |
| BC637L34Z BC637D26Z |
NPN Epitaxial Silicon Transistor 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Tape & Reel 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| BC639L34Z BC639D74Z |
NPN Epitaxial Silicon Transistor 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| FCX591 FCX491 FCX491TA |
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-89, 3 PIN
|
Diodes Incorporated
Diodes, Inc.
|
| DSS4140V DSS4140V-7 |
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Diodes Inc.
|
| BC639-16 BC637 |
High Current Transistor NPN Silicon(硅NPN大电流晶体管) 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| NTE128P NTE129P |
1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO237
1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO237
Silicon Complementary Transistors General Purpose Amp
|
NTE[NTE Electronics]
|
| KTC1008 KTC1008GR KTC1008-15 |
EPITAXIAL PLANAR NPN TRANSISTOR
General Purpose Transistor
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| 2SK2258-01 |
N-channel MOS-FET 4 A, 1000 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| BCP56-10T1G |
High Current Transistor NPN; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-261AA
|
ON Semiconductor
|
|
