| PART |
Description |
Maker |
| SI2304DDS SI2304DDS-T1-GE3 |
N-Channel 30-V (D-S) MOSFET
3300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
|
Vishay Siliconix
|
| CM1500HC-66R |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
1500 A, 3300 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| DIM200PHM33-F000 |
Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
Dynex Semiconductor, Ltd.
|
| 22R335 |
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR
|
C&D TECHNOLOGIES INC
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| SM3338-43 |
3300-3800 MHz 20 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| C947U332MYWDBA7317 |
Ceramic, Safety, C900_Y, 3300 pF, 20%, Y5U, Lead Spacing = 7.5mm
|
Kemet Corporation
|
| 5SHY35L4512 |
Asymmetric Integrated Gate- Commutated Thyristor 3300 A, 4500 V, ASSYMETRIC SCR
|
ABB, Ltd.
|
| PM1200HCE330- PM1200HCE330-1 PM1200HCE330 |
-High Voltage Intelligent Power Module (1200 Amperes/3300 Volts)
|
Powerex Power Semiconductors
|
| ERJ8GEK332V |
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 10 %, 200 ppm, 3300 ohm, SURFACE MOUNT CHIP
|
Panasonic, Corp.
|
| QR3310001 |
Fast Recovery Diode Module (100 Amp/3300 Volts) 快速恢复二极管模块00 Amp/3300伏特
|
Powerex, Inc.
|
|
