| PART |
Description |
Maker |
| GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| MCM63R918FC3.3R MCM63R918FC3.7R MCM63R836FC3.7R |
512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
512K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
256K X 36 LATE-WRITE SRAM, 1.85 ns, PBGA119
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| GS8150V18AB-250 GS8150V36AB-250 GS8150V36AGB-250 G |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GX60N60C2D1 |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
|
IXYS CORP
|
| HM64YLB36512BP-33 HM64YLB36512BP-28 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas
|
| HM62G18512ABP-30 HM62G18512ABP-33 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas
|
| GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300 |
18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb B>1x1Dp HSTL I/O Double Late Write SigmaRAM
18Mb Σ1x1Dp HSTL I/O Double Late Write SigmaRAM
|
GSI Technology
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
| MCM69R736A MCM69R736AZP5 MCM69R736AZP5R MCM69R736A |
4M LATE WRITE HSTL
|
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| MCM69L818AZP9.5R MCM69L736A MCM69L736AZP10.5 MCM69 |
4M Late Write HSTL
|
MOTOROLA[Motorola, Inc]
|
| MCM69R737AZP7 MCM69R737AZP6R MCM69R737AZP5R MCM69R |
From old datasheet system
4M Late Write LVTTL
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
