| PART |
Description |
Maker |
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| SFH487P Q62703-Q517 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MRF9180R6 |
880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| PDI-G103 |
GaAlAs (880 nm peak) Photodiode
|
List of Unclassifed Manufacturers
|
| OD-148-C |
0.3556 mm, 1 ELEMENT, INFRARED LED, 880 nm TO-46
|
霍尼韦尔
|
| OLS-150880-X-TD OLS-150880-X-TU OIS-150880 |
Series 150 - 1206 Standard IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| OIS-210880 OIS-210880-X-T |
Series 210 - side view IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| OIS-170880 OIS-170880-X-T |
Series 170 - 0805 Standard IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| TSV632 TSV632AID_DT TSV632AIST TSV632ID_DT TSV632I |
Rail-to-rail input/output 60 μA 880 kHz operational amplifiers
Rail-to-rail input/output 60 楼矛A 880 kHz operational amplifiers
|
STMicroelectronics
|
