| PART |
Description |
Maker |
| MTP29N15E |
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
|
| RF1K4922396 RF1K49223 |
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET?/a> Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET
2.5A, -30V, 0.150 Ohm, Dual P-Channel LittleFET PowerMOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| MTP50N06VL MTP50N06VL_D ON2618 MTP50N06 |
From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| FQA65N20NL |
200V N-Channel QFET 65 A, 200 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
| LP25-122-KT151W LP12-112-KT151W LP12-163-KT151W LP |
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1200 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1100 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 16000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 5100 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1600 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 150 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 390 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 30 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 33 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 3.6 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 2.4 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 3.3 ohm, THROUGH HOLE MOUNT
RTD TEMP SENSOR-PLATINUM
RESISTOR, TEMPERATURE DEPENDENT, PTC, 75 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 20 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 24 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 82 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 68 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 6800 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 180 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 18000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1800 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 820 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 680 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 22 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 11 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 13 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 56 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 18 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 160 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 68000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1.8 ohm, THROUGH HOLE MOUNT
|
RCD Components, Inc.
Golledge Electronics, Ltd.
RCD COMPONENTS INC
|
| RFD3055 RFD3055SM RFP3055 FN3648 |
12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
12A 60V 0.150 Ohm N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| IRFP230 SSH40N15A SSH20N50A IRFP330 SSH60N10A |
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
40 A, 150 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
60 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 19003-0048 19003-0057 19003-0053 19003-0056 19003- |
.250 X.032 FML FIQD EXP CONT.(BB-2206XC) 2 mm2, PUSH-ON TERMINAL
.187X.032 FEMALE AQUA FIQD CONT BB-2208C 2 mm2, PUSH-ON TERMINAL
.187X.020 FEMALE FIQD EXPANDED (BB-2207X 2 mm2, PUSH-ON TERMINAL
.187 X .032 FEMALE FIQD (BB-2208) 2 mm2, PUSH-ON TERMINAL
.250 X.032 FML FIQD EXP TAPED(BB-2206XT) 2 mm2, PUSH-ON TERMINAL
190030058 2 mm2, PUSH-ON TERMINAL
.205 X .020 BLUE FIQD CONT BB-2215C 2 mm2, PUSH-ON TERMINAL
.250 X.032 FML FIQD EXP TAPED(AA-2201XT) 0.8 mm2, PUSH-ON TERMINAL
190030060 2 mm2, PUSH-ON TERMINAL
.187 X .020 FEMALE FIQD CONT. (AA-2202C) 0.8 mm2, PUSH-ON TERMINAL
.250 X .032 FEMALE FIQD CON 2 mm2, PUSH-ON TERMINAL
|
Molex, Inc.
TE Connectivity, Ltd.
MOLEX INC
|
| SI7439DP-T1-GE3 SI7439DP-T1-E3 |
3 A, 150 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
3 A, 150 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET ROHS COMPLIANT, POWERPAK, SOP-8
|
Vishay Intertechnology, Inc.
|
|
