| PART |
Description |
Maker |
| TC2591 |
1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
|
Transcom, Inc.
|
| TC3967 |
2 W Packaged Single-Bias PHEMT GaAs Power FETs
|
Transcom, Inc.
|
| TC3938 |
Packaged Single-Bias Medium Power PHEMT GaAs FETs
|
Transcom, Inc.
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
| HMC619LP5 HMC619LP5E |
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz
|
Hittite Microwave Corporation
|
| MRFG35005MT1 |
MRFG35005MT1 3.5 GHz, 4.5 W, 12 V Power FET GaAs PHEMT
|
Motorola
|
| HMC659 |
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz
|
Hittite Microwave Corporation
|
| HMC608 |
GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz
|
Hittite Microwave Corporation
|
| HMC60807 |
GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz
|
Hittite Microwave Corporation
|
