| PART |
Description |
Maker |
| GB840 |
SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 8A RECTIFIE
|
GTM CORPORATION
|
| SPK1245-C-S-A01 |
SCHOTTKY BARRIER SOLAR RECTIFIE VOLTAGE 45 Volts CURRENT 12 Amperes
|
Rectron Semiconductor
|
| 2N2505 |
Silicon Controlled Rectifier; Package: TO-93; IT (Av) (A): 150; VTM (V): 1.7; VGT (V): 3; IGT (µA): 150; Vrrm (V): 200; 235.5 A, SCR, TO-93
|
Microsemi, Corp.
|
| MJH11019G MJH11018G |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-218
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-218
|
ON Semiconductor
|
| 150KSR200M 152KR300AMPBF |
150 A, 200 V, SILICON, RECTIFIER DIODE
150 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
|
|
| M68731H 68731H |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER 150-175MHz 7W FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER / 150-175MHz / 7W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| T6300415 T6300420 T6200915 T6200920 T6200930 T6300 |
TV 42C 36#22D 6#8(TWINAX) SKT 第一阶段控制晶闸管（150-300安培100-1600伏特
Phase Control SCR (150-300 Amperes 100-1600 Volts) 第一阶段控制晶闸管（150-300安培100-1600伏特
|
Micropac Industries, Inc.
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| SF16H03-3 SF33H35 |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD
|
RECTRON LTD
|
| BYV72-150 |
30 A, 150 V, SILICON, RECTIFIER DIODE
|
NXP SEMICONDUCTORS
|
| BYP20-150 |
5 A, 150 V, SILICON, RECTIFIER DIODE
|
NXP Semiconductors N.V.
|
|
