| PART |
Description |
Maker |
| SI1427EDH |
Load Switch for Portable Devices
|
Vishay Siliconix
|
| AS3658 |
Power and Audio Management Unit for Portable Devices
|
austriamicrosystems AG
|
| DTC205813 |
N-Channel 20-V (D-S) MOSFET Load Switches for Portable Devices
|
DinTek Semiconductor Co,.Ltd
|
| B300D44A102XXG B300W35A102XYG |
Audio Processor for Portable Communication Devices DFN?4 D SUFFIX
|
ON Semiconductor
|
| ELM9709CAA ELM9709CBA ELM9709NAA ELM9709NBA ELM970 |
CMOS voltage detector IC for battery-operated portable devices CMOS电压检测芯片的电池的便携式设备
|
ELM Electronics
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| ST80-18P_4 ST80-18S_4 ST60X-18P-CV ST40X-18P-CV ST |
36 CONTACT(S), MALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SURFACE MOUNT, RECEPTACLE
Interface Connectors for Miniature, Portable Terminal Devices
|
Hirose Electric
|
| 2FAE-C15R |
Interface, ESD protection and EMI filtering for the data port of portable electronic devices such as cell phones, modems and PDAs, Tape and Reel
|
Bourns, Inc.
|
| M67743H 67743H |
77-88MHz /12.5V /7W / FM PORTABLE RADIO
77-88MHZ, 12.5V, 7W, FM PORTABLE RADIO
77-88MHz12.5V7W FM PORTABLE RADIO
From old datasheet system
77-88MHz,12.5V,7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPD17071 UPD17071GB-012 UPD17071GB-012-1A7 UPD1707 |
Portable DTS controller 17K series
4-BIT SINGLE-CHIP MICROCONTROLLER WITH PLL FREQUENCY SYNTHESIZER CONTROLLER FOR PORTABLE FM/AM RADIO AND TV
|
NEC[NEC]
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
|
