| PART |
Description |
Maker |
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| MUX08AQ_883C MUX08BQ_883C MUX08EP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)
|
Analog Devices
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| PRZA-1-10W |
RESISTOR, WIRE WOUND, 10 W, 350; 400 ppm, 1 ohm - 820 ohm, THROUGH HOLE MOUNT RADIAL LEADED
|
Piher Sensors ?Controls SA
|
| FSOT-65 FSOT-30 |
RESISTOR, WIRE WOUND, 70 W, 3; 5 %, 260; 400 ppm, 1 ohm - 20 ohm, CHASSIS MOUNT RADIAL LEADED
RESISTOR, WIRE WOUND, 30 W, 3; 5 %, 260; 400 ppm, 1 ohm - 20 ohm, CHASSIS MOUNT RADIAL LEADED
|
Bourns, Inc.
IRC Advanced Film
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| SIHF740STRL-GE3 |
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| SIHF730A-E3 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| IRF730 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| IRFR310 |
1.7 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
VISHAY INTERTECHNOLOGY INC
|
| RFP8P08 RFP8P10 RFM8P10 RFM8P08 |
-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
|
HARRIS[Harris Corporation]
|
|
